1SS383
1SS383 is Silicon diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Low Voltage High Speed Switching
- Small package
- posed of 2 independent diodes.
- Low forward voltage: VF (3) = 0.54V (typ.)
- Low reverse current: IR = 5μA (max)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
45 40 300
- 100
- 1- 100
- V V m A m A A m W
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
- 55 to 125
°C
JEDEC
―
Operating temperature range
Topr
- 40 to 100
°C
JEITA
TOSHIBA
― 1-2U1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.006g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
- : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic...
