1SS383 Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching Small package posed of 2 independent diodes. VF (3) = 0.54V (typ.) Low reverse current: Using continuously under heavy loads (e.g.
1SS383 datasheet by Toshiba.
| Part number | 1SS383 |
|---|---|
| Datasheet | 1SS383_ToshibaSemiconductor.pdf |
| File Size | 249.48 KB |
| Manufacturer | Toshiba |
| Description | Silicon diode |
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching Small package posed of 2 independent diodes. VF (3) = 0.54V (typ.) Low reverse current: Using continuously under heavy loads (e.g.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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1SS383 | Low Voltage High Speed Switching Diodes | Kexin |
| Part Number | Description |
|---|---|
| 1SS381 | Silicon Epitaxial Planar Type diode |
| 1SS382 | Silicon diode |
| 1SS384 | Silicon diode |
| 1SS385 | Silicon diode |
| 1SS385F | Diode |
| 1SS387 | Diode |
| 1SS388 | Silicon Diode |
| 1SS389 | Silicon Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |