1SS384
1SS384 is Silicon diode manufactured by Toshiba.
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Low Voltage High Speed Switching z Small package z posed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5m A
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation
VRM VR IFM IO IFSM P
15 10 200
- 100
- 1- 100
- V V m A m A A m W
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
- 55 to 125
°C
Operating temperature range
Topr
- 40 to 100
°C
JEDEC
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Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
JEITA
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TOSHIBA
1-2U1A
Weight: 0.006g (typ.) temperature/current/volt...
