1SS384 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z posed of 2 independent diodes. VF (2) = 0.23V (typ.) @IF = 5mA 1SS384 Unit: Using continuously under heavy loads (e.g.
1SS384 Datasheet
| Part number | 1SS384 |
|---|---|
| Download | 1SS384 Datasheet (PDF) |
| File Size | 199.62 KB |
| Manufacturer | Toshiba |
| Description | Silicon diode |
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