Datasheet Details
| Part number | 1SS384 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 199.62 KB |
| Description | Silicon diode |
| Datasheet | 1SS384_ToshibaSemiconductor.pdf |
|
|
Overview: TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.
| Part number | 1SS384 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 199.62 KB |
| Description | Silicon diode |
| Datasheet | 1SS384_ToshibaSemiconductor.pdf |
|
|
|
| Part Number | Description |
|---|---|
| 1SS381 | Silicon diode |
| 1SS382 | Silicon diode |
| 1SS383 | Silicon diode |
| 1SS385 | Silicon diode |
| 1SS385F | Diode |
| 1SS387 | Diode |
| 1SS388 | Silicon Diode |
| 1SS389 | Silicon Diode |
| 1SS300 | Silicon Epitaxial Planar Type Diode |
| 1SS301 | Silicon Epitaxial Planar Type Diode |