Semtech Corporation 1SS389
SILICON EPITAXIAL S CHOTTKY BARRIER DIODE
| Part No. | 1SS389 |
|---|---|
| Datasheet | 1SS389 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
FEATURES
● Low forward voltage: VF = 0.23V (typ.) @IF=5mA PINNING PIN 1 2DESCRIPTION
Cathode Anode 12 SWABSOLUTE MAXIMUM RATINGS
(T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Top View Marking Code: "SW" Simplified outline SOD-523 and symbol Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr Value 15 10 200 100 1 150 125 -55 to +125 -40 to +100 Unit V V mA mA A mW ? ? ? Characteristics at T j = 25 ? Parameter Forward Voltage Reverse Current Total Capacitance Test Conditions IF = 1mA IF = 5mA IF = 100mA VR = 10V f = 1MHZ Symbol VF VF VF IR CT Min - Typ 0.18 0.23 0.35 20 Max - 0.30 0.50 20 40 Unit V V V µA pF РАДИОТЕХ Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru
