1SS389 datasheet PDF for SILICON EPITAXIAL S CHOTTKY BARRIER DIODE.
| Part number | 1SS389 |
|---|---|
| Datasheet | 1SS389-SEMTECH.pdf |
| File Size | 240.09 KB |
| Manufacturer | SEMTECH |
| Description | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
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Cathode Anode 12 SW Ratings (T j = 25? ) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Top View Marking Code: Characteristics at T j = 25.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
1SS389 | Silicon Diode | Toshiba Semiconductor |
 |
1SS389 | Schottky Barrier Diode | LGE |
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1SS389 | Switching Diode | MCC |
 |
1SS389 | HIGH SPEED SWITCHING DIODE | Kexin |
 |
1SS389 | SCHOTTKY BARRIER DIODE | JCST |
| Part Number | Description |
|---|---|
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS314 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS352 | Silicon Epitaxial Planar Switching Diode |
| 1SS355 | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| 1SS367 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS368 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS390 | Band swithing diode |
| 1SS106 | SILICON SCHOTTKY BARRIER DIODE |
