Datasheet Details
| Part number | 1SS389 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 240.09 KB |
| Description | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| Datasheet | 1SS389-SEMTECH.pdf |
|
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Overview: 1SS389 SILICON EPITAXIAL S CHOTTKY BARRIER DIODE High Speed Switching.
| Part number | 1SS389 |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 240.09 KB |
| Description | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| Datasheet | 1SS389-SEMTECH.pdf |
|
|
|
Cathode Anode 12 SW Absolute Maximum Ratings (T j = 25?
) Parameter Maximum (peak) Reverse Voltage Reverse Voltage Maximum (peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Top View Marking Code: "SW" Simplified outline SOD-523 and symbol Symbol VRM VR IFM IO IFSM Ptot TJ Ts Topr Value 15 10 200 100 1 150 125 -55 to +125 -40 to +100 Unit V V mA mA A mW ?
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
1SS389 | Silicon Diode | Toshiba Semiconductor |
 |
1SS389 | Schottky Barrier Diode | LGE |
 |
1SS389 | Switching Diode | MCC |
 |
1SS389 | HIGH SPEED SWITCHING DIODE | Kexin |
 |
1SS389 | SCHOTTKY BARRIER DIODE | JCST |
| Part Number | Description |
|---|---|
| 1SS388 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS314 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS352 | Silicon Epitaxial Planar Switching Diode |
| 1SS355 | SILICON EPITAXIAL PLANAR SWITCHING DIODES |
| 1SS367 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS368 | SILICON EPITAXIAL PLANAR DIODE |
| 1SS369 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| 1SS373 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
| 1SS390 | Band swithing diode |
| 1SS106 | SILICON SCHOTTKY BARRIER DIODE |