Semtech Corporation 1SS388
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
| Part No. | 1SS388 |
|---|---|
| Datasheet | 1SS388 Download |
| Manufacturer |  Semtech Corporation |
| Description | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
| Buy | Stock & Price |
DESCRIPTION
Cathode Anode 2 O Top View Marking Code: "O" Simplified outline SOD-523 and symbolABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Maximum (Peak) Reverse Voltage Reverse Voltage Average Forward Current Maximum (Peak) Forward Current Surge Current (10 ms) Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Symbol VRM VR IO IFM IFSM Ptot TJ Topr Ts Value 45 40 100 300 1 150 125 - 40 to + 100 - 55 to + 125 Unit V V mA mA A mW OC OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 10 V Total Capacitance at f = 1 MHz Symbol VF IR CT Max. 0.6 5 25 Unit V µA pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 1SS388 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 A C 1SS388 PACKAGE OUTLINE Plastic surface mounted package; 2 leads ∠ ALL ROUND HE D A SOD-523 E bp UNIT A b p C D E HE V mm 0.70 0.60 0.4 0.
