1SS388 - High Speed Switching Diode

LGE

Key Features

Low forward voltage. Low reverse current. Small package.

1SS388 high speed switching diode by LGE - Datasheet Preview

Datasheet Details

Part number	1SS388
Manufacturer	LGE
File Size	354.57 KB
Description	High Speed Switching Diode
Datasheet	1SS388 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
1SS388	Silicon Diode	Toshiba Semiconductor
1SS388	SILICON EPITAXIAL SCHOTTKY BARRIER DIODE	SEMTECH
1SS388	SILICON EPITAXIAL SCHOTTKY BARRIER TYPE	Pan Jit International
1SS388	Switching Diode	MCC
1SS388	SCHOTTKY BARRIER DIODE	JCET

Other Datasheets by LGE

Part Number	Description
1SS380	Silicon Epitaxial Planar Diodes
1SS387	High Speed Switching Diodes
1SS389	Schottky Barrier Diode
1SS344	Surface Mount Schottky Planar Diode
1SS355	0.2W Fast Switching Diodes

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

1SS388 High Speed Switching Diode SOD-523 Features Low forward voltage. Low reverse current. Small package. Applications High-speed switching in surface mounted circuits. Dimensions in inches and (millimeters) Ordering Information Type No. 1SS388 Marking S3 Package Code SOD-523 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage DC Reverse voltage VRM 45 VR 40 Continuous forward current Surge current IF IFSM 100 1 Total power dissipation Ptot 150 Junction temperature Storage temperature Tj 125 Tstg -55-125 Unit V V mA A mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Symbol Min. Typ. 0.28 VF 0.36 0.54 Max. 0.