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2N2222 / 2N2222A
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
Value
Unit
2N2222 2N2222A
VCBO
60 75
V
2N2222 2N2222A
VCEO
30 40
V
2N2222 2N2222A
VEBO
5 6
V
IC
600
mA
Ptot
625
mW
Tj
150
OC
Tstg
- 55 to + 150
OC
SEMTECH ELECTRONICS LTD.