The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
P2N2222A
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector −Emitter Voltage
VCEO
40
Collector −Base Voltage
VCBO
75
Emitter−Base Voltage
VEBO
6.0
Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
IC
600
PD
625
5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5
W
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to
°C
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device.
2N2222 Datasheet
