Datasheet Details
| Part number | 2N2222A |
|---|---|
| Manufacturer | CDIL |
| File Size | 87.53 KB |
| Description | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| Datasheet | 2N2222A_CDIL.pdf |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2221A 2N2222A TO-18 Switching And Linear Application DC And VHF Amplifier.
| Part number | 2N2222A |
|---|---|
| Manufacturer | CDIL |
| File Size | 87.53 KB |
| Description | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| Datasheet | 2N2222A_CDIL.pdf |
|
|
|
SYMBOL 2N2221A,22A Collector -Emitter Voltage VCEO 40 Collector -Base Voltage VCBO 75 Emitter -Base Voltage VEBO 6.0 Collector Current Continuous IC 800 Power Dissipation @Ta=25 degC PD 500 Derate Above 25deg C 2.28 @ Tc=25 degC PD 1.2 Derate Above 25deg C 6.85 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 - - 10 Emitter-Cut off Current Base-Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Ta=150 deg C VCB=60V, IE=0 - 10 ICEX VCE=60V, VEB=3V - 10 IEBO VEB=3V, IC=0 - 10 IBL VCE=60V, VEB=3V - 20 VCE(Sat)* IC=150mA,IB=15mA - 0.3 IC=500mA,IB=50mA 1.0 VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 IC=500mA,IB=50mA - 2.0 UNIT V V V mA mW mW/deg C W mW/deg C deg C UNIT V V V nA uA nA nA nA V V V V Continental Device India Limited Data Sheet Page 1 of 3 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION DC Current Gain hFE IC=0.1mA,VCE=10V IC=1mA,VCE=10V IC=10mA,VCE=10V 2N2221A to 2N2222A 2221A 2222A >20 >35 >25 >50 >35 >75 DYNAMIC CHARACTERISTICS Small Signal Current Gain hfe Input Impedance hie Voltage Feedback Ratio hre Out put Admittance hoe Collector Base Time Constant rb'Cc Real Part Common-Emitter High Frequency Input Impedance Noise Figure Re(hie) NF Ta=55 deg C IC=10mA,VCE=10V IC=150mA,VCE=10V IC=150mA,VCE=1V IC=500mA,VCE=10V >15 40-
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2N2222A | Radiation Hardened NPN Silicon Switching Transistors | VPT |
| Part Number | Description |
|---|---|
| 2N2222 | NPN SILICON PLANAR SWITCHING TRANSISTORS |
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| 2N2221A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2218 | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2218A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2219 | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2219A | NPN SILICON PLANAR SWITCHING TRANSISTORS |
| 2N2270 | NPN Silicon Planar Transistor |
| 2N2102 | NPN Silicon Transistor |
| 2N2369 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |