• Part: 2N2221A
  • Description: NPN SILICON PLANAR SWITCHING TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 87.53 KB
2N2221A Datasheet (PDF) Download
Continental Device India
2N2221A

Description

Collector -Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Collector-Cut off Current SYMBOL TEST CONDITION VCEO VCBO VEBO ICBO IC=10mA,IB=0 IC=10uA.IE=0 IE=10uA, IC=0 VCB=60V, IE=0 VALUE MIN MAX 40 75 6.0 - - 10 Emitter-Cut off Current Base-Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Ta=150 deg C VCB=60V, IE=0 - 10 ICEX VCE=60V, VEB=3V - 10 IEBO VEB=3V, IC=0 - 10 IBL VCE=60V, VEB=3V - 20 VCE(Sat)* IC=150mA,IB=15mA - 0.3 IC=500mA,IB=50mA 1.0 VBE(Sat) * IC=150mA,IB=15mA - 0.6-1.2 IC=500mA,IB=50mA - 2.0 UNIT V V V mA mW mW/deg C W mW/deg C deg C UNIT V V V nA uA nA nA nA V V V V Continental Device India Limited Data Sheet Page 1 of 3 DESCRIPTION SYMBOL TEST CONDITION DC Current Gain hFE IC=0.1mA,VCE=10V IC=1mA,VCE=10V IC=10mA,VCE=10V 2N2221A to 2N2222A 2221A 2222A >20 >35 >25 >50 >35 >75 DYNAMIC CHARACTERISTICS Small Signal Current Gain hfe Input Impedance hie Voltage Feedback Ratio hre Out put Admittance hoe Collector Base Time Constant rb'Cc Real Part mon-Emitter High Frequency Input Impedance Noise Figure Re(hie) NF Ta=55 deg C IC=10mA,VCE=10V IC=150mA,VCE=10V IC=150mA,VCE=1V IC=500mA,VCE=10V >15 40-120 >20 >25 >35 100-300 >50 >40 ALL f=1kHz IC=1mA, VCE=10V IC=10mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IC=1mA, VCE=10V IC=10mA, VCE=10V IE=20mA, VCB=20V f=31.8MHz IC=20mA, VCE=20V f=300MHz IC=100uA, VCE=10V Rs=1kohms, f=1kHz 30-150 50-300 50-300 75-375 1.0-3.5 2.0-8.0 0.2-1.0 0.25-1.25 <5.0 <8.0 <2.5 <4.0 3.0-15 5.0-35 10-100 25-200 <150 <150 <60 <60 - <4.0 DYNAMIC CHARACTERISTICS Transistors Frequency Out-Put Capacitance Input Capacitance ft IC=20mA, VCE=20V >250 >300 f=100MHz Cob VCB=10V, IE=0 <8.0 <8.0 f=100kHz Cib VEB=0.5V, IC=0 <25 <25 f=100kHz SWITCHING Time Delay time Rise time td IC=150mA,IB1=15mA tr VCC=30V,VBE=0.5V - <10 <25 Storage time Fall time ts IC=150mA, IB1= tf IB2=15mA, VCC=30V - <225 <60 *Pulse Condition: Pulse Width=300us, Duty Cycle=2% UNIT kohms x10-4 umhos ps ohms dB MHz pF pF ns ns ns ns Continental Device India Limited Data Sheet Page 2 of 3 E KC F All diminsions in mm. A B D TO-18 Metal Can Package G 2 1 H L 3 J DIM MIN MAX A 5.24 5.84 B 4.52 4.97 C 4.31 5.33 D 0.40 0.53 E - 0.76 F - 1.27 G - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45 DEG Packing Detail PACKAGE STANDARD PACK Details Net Weight/Qty TO-18 1K/polybag 350 gm/1K pcs 21 3.