• Part: 2N2221
  • Description: NPN SILICON PLANAR SWITCHING TRANSISTORS
  • Category: Transistor
  • Manufacturer: Continental Device India
  • Size: 1.32 MB
Download 2N2221 Datasheet PDF
Continental Device India
2N2221

Description

SYMBOL TEST CONDITION VALUE MIN TYP MAX Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current Collector Cut Off Current 2N2221 2N2222 • VCEO VCBO VEBO ICBO IEBO IC= 10mA, IB= 0 IC= 10uA, IE= 0 IE= 10V, IC= 0 VCB= 50V, IE= 0 VCB = 0V, IE = 0, VEB=3V, IC= 0 • IC=0.1mA, VCE=10V 30 -- -- 60 -- -- 5 -- -- -- 10 -- -- 10 -- -- 10 20 -- -- 35 -- -- 2N2221 2N2222 IC=1mA, VCE=10V 25 -- -- 50 -- -- DC Current Gain 2N2221 2N2222 2N2221 2N2222 • IC=10mA, VCE=10V hFE • IC=150mA, VCE=10V 35 -- -- 75 -- -- 40 -- 120 100 -- 136 2N2221 2N2222 • IC=150mA, VCE=1V 20 -- -- 50 -- -- 2N2221 2N2222 • IC=500mA, VCE=10V 20 -- -- 30 -- -- SMALL SIGNAL CHARACTERISTICS Collector Emitter Saturation Voltage • VCE (sat) IC=150mA, IB=15mA IC=500mA, IB=50mA -- -- 0.4 0.6 Base Emitter Saturation Voltage • VBE (sat) IC=150mA, IB=15mA IC=500mA, IB=50mA -- -- 1.3 2.6 Transition Frequency • • fT IC=20mA, VCE=20V, f=100MHz 250 -- Output Capacitance Cobo VCB=10V, IE=0, f=100KHz -- -- 8 Input Capacitance Cibo VBE=0.5V, IC=0, f=100KHz -- -- 30 SWITCHING TIME Delay Time Rise Time Storage Time Fall Time td IC=150mA, IB1=15mA, tr VCC=30V,VBE(off)=0.5V ts IC=150mA, IB1= tf IB2=15mA, VCC=30V -- -- 10 -- -- 25 -- -- 225 -- -- 60 • Pulse Test: Pulse Width < 300ms, Duty Cycle < 2% • • fT is defined as the frequency at which IhfeI extrapolates to unity UNIT V V V nA µA nA V V MHz pF pF ns ns ns ns 2N2221_2222 Rev1 27012020EGL Continental Device India Pvt.