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2SA1016 Datasheet Preview

2SA1016 Datasheet

PNP Silicon Epitaxial Planar Transistor

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ST 2SA1016
PNP Silicon Epitaxial Planar Transistor
High -Voltage Low-Noise Amp applications
The transistor is subdivided into three groups F, G
and H, according to its DC current gain.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25? )
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICP
Ptot
Tj
TS
G S P FORM A IS AVAILABLE
Value
120
100
5
50
100
400
125
-55 to +125
Unit
V
V
V
mA
mA
mW
OC
OC
РАДИОТЕХ-ТРЕЙД
Тел.: (495) 795-0805
Факс: (495) 234-1603
Эл. почта: info@rct.ru
Веб: www.rct.ru
®




SEMTECH

2SA1016 Datasheet Preview

2SA1016 Datasheet

PNP Silicon Epitaxial Planar Transistor

No Preview Available !

ST 2SA1016
Characteristics at Tamb=25 OC
DC Current Gain
at -VCE=6V, -IC=1mA
Current Gain Group F
G
H
Collector Base Breakdown Voltage
at -IC=10µA
Collector Emitter Breakdown Voltage
at -IC=1mA
Emitter Base Breakdown Voltage
at -IE=10µA
Collector Cutoff Current
at -VCB=80V
Emitter Cutoff Current
at -VEB=4V
Collector Emitter Saturation Voltage
at -IC=10mA, -IB=1mA
Gain Bandwidth Product
at -VCE=6V, -IC=1mA
Output Capacitance
at -VCB=10V, f=1MHz
Noise Level
at VCC=30V, IC=1mA
at Rg=56K,VG=77dB/1kHz
Noise Peak Level
at VCC=30V, IC=1mA
at Rg=56K,VG=77dB/1kHz
Symbol
hFE
hFE
hFE
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-ICBO
-IEBO
-VCE(sat)
fT
COB
CNO(ave)
CNO(peak)
Min.
160
280
480
120
100
5
-
-
-
-
-
-
-
G S P FORM A IS AVAILABLE
Typ.
-
-
-
-
-
-
-
-
-
110
2.2
-
-
Max.
320
560
960
-
-
-
1
1
0.5
-
-
35
200
Unit
-
-
-
V
V
V
µA
µA
V
MHz
pF
mV
mV
SEMTECH ELECTRONICS LTD.
(Subsidiary of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 17/5/2004


Part Number 2SA1016
Description PNP Silicon Epitaxial Planar Transistor
Maker SEMTECH
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