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ST 2SC536
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T
a
= 25? ) Symbol Value 40 30 5 100 50 400 125 -55 to +125 Unit V V V mA mA mW
O O
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO IC IB Ptot Tj TS
C C
G S P FORM A IS AVAILABLE
РАДИОТЕХ-ТРЕЙД
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