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2SC536 - TO-92 Plastic Encapsulate Transistors

Key Features

  • Power dissipation PCM: 400 mW (Tamb=25℃) 1.

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Datasheet Details

Part number 2SC536
Manufacturer Jiangsu Changjiang Electronics Technology
File Size 33.96 KB
Description TO-92 Plastic Encapsulate Transistors
Datasheet download datasheet 2SC536 Datasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536 FEATURES Power dissipation PCM: 400 mW (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 TRANSISTOR (NPN) TO-92 Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob unless otherwise specified) Test conditions MIN 40 30 5 1 1 60 960 0.5 100 3.