Semtech Corporation 2SC536
NPN Silicon Transistor
| Part No. | 2SC536 |
|---|---|
| Datasheet | 2SC536 Download |
| Manufacturer |  Semtech Corporation |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(T a = 25? ) Symbol Value 40 30 5 100 50 400 125 -55 to +125 Unit V V V mA mA mW O O Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS C C G S P FORM A IS AVAILABLE РАДИОТЕХ-ТРЕЙД ® Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта: info@rct.ru Веб: ST 2SC536 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group O Y G L at VCE=6V, IC=150mA Collector Emitter Saturation Voltage at IC=50mA, IB=5mA Base Emitter Saturation Voltage at IC=50mA, IB=5mA Collector Cutoff Current at VCB=35V Emitter Cutoff Current at VEB=5V Transition Frequency at VCE=10V, IE=1mA Collector Output Capacitance at VCB=10V, f=1MHz Base Intrinsic Resistance at VCB=10V IC=1mA, f=30MHz Noise Figure at VCE=6V, IC=0.1Ma at f=1KHz, RG=10KΩ NF 1 10 dB Rbb’ 50 Ω COB 2 3.5 pF fT 100 MHz IEBO 0.1 µA ICBO 0.1 µA VBE(sat) 1.2 V VCE(sat) 0.5 V hFE hFE hFE hFE hFE 70 120 200 350 25 100 140 240 400 700 Min.