ESD protected up to 2KV
Drain
Gate
Source
1.Gate 2.Source 3.Drain SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulse Width ≤ 10 µs)
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Drain Source Breakdown Voltage at I.
NPN Silicon Epitaxial Planar Medium Power Transistor
Full PDF Text Transcription (Reference)
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MMBT7002K
N-Channel Enhancement Mode Field Effect Transistor
Features • Low on resistance RDS(ON) • Low gate threshold voltage
• Low input capacitance • ESD protected up to 2KV
Drain
Gate
Source
1.Gate 2.Source 3.
MMBT7002K Datasheet
