| Part Number | MMBT7002K Datasheet |
|---|---|
| Manufacturer | SEMTECH |
| Overview |
MMBT7002K
N-Channel Enhancement Mode Field Effect Transistor
Features • Low on resistance RDS(ON) • Low gate threshold voltage
• Low input capacitance • ESD protected up to 2KV
Drain
Gate
Source
.
* Low on resistance RDS(ON) * Low gate threshold voltage * Low input capacitance * ESD protected up to 2KV Drain Gate Source 1.Gate 2.Source 3.Drain SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain C. |
MMBT7002K Datasheet and Specifications PDF
The MMBT7002K is a N-Channel MOSFET.
| Part Number | MMBT7002K Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Diotec Semiconductor |
| Overview |
MMBT7002K
MMBT7002K
N
N-Channel Enhancement Mode FET with protected Gate N-Kanal FET mit Gateschutzdiode – Anreicherungstyp
Version 2011-02-01
2.9 ±0.1 0.4 3
Type Code
1
2
1.1
1.9
Dimensions .
0°C -55…+150°C
© Diotec Semiconductor AG
1
MMBT7002K
Characteristics (Tj = 25°C)
Drain-Source breakdown voltage * Drain-Source-Durchbruchspannung ID = 10 µA Drain-Source leakage current * Drain-Source Leckstrom BVDSS G short VDS = 60 V Gate-Source leakage current * Ga. |