ESD protected up to 2KV
Drain
Gate
Source
1.Gate 2.Source 3.Drain SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulse Width ≤ 10 µs)
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Drain Source Breakdown Voltage at I.
Full PDF Text Transcription for MMBT7002K (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MMBT7002K. For precise diagrams, and layout, please refer to the original PDF.
MMBT7002K N-Channel Enhancement Mode Field Effect Transistor Features • Low on resistance RDS(ON) • Low gate threshold voltage • Low input capacitance • ESD protected up ...
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Low gate threshold voltage • Low input capacitance • ESD protected up to 2KV Drain Gate Source 1.Gate 2.Source 3.
MMBT7002K Datasheet
