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MMBT7002 - N-Channel MOSFET

Features

  • High density cell design for low RDS(ON).
  • Voltage controlled small signal switching.
  • High saturation current capability.
  • High speed switching Gate Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage -Continuous -Non Repetitive (tp < 50 µs) Maximum Drain Current -Continuous -Pulsed Total Power Dissipation Operating and Storage Temperature Range Drain Source Symbol VDSS VDGR VGSS ID P.

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Datasheet Details

Part number MMBT7002
Manufacturer SEMTECH
File Size 211.77 KB
Description N-Channel MOSFET
Datasheet download datasheet MMBT7002 Datasheet
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Full PDF Text Transcription

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MMBT7002 N-Channel Enhancement Mode Field Effect Transistor Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching • High saturation current capability • High speed switching Gate Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage -Continuous -Non Repetitive (tp < 50 µs) Maximum Drain Current -Continuous -Pulsed Total Power Dissipation Operating and Storage Temperature Range Drain Source Symbol VDSS VDGR VGSS ID Ptot TJ, Ts 1.Gate 2.Source 3.
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