| Part Number | MMBT7002 Datasheet |
|---|---|
| Manufacturer | Diotec Semiconductor |
| Overview |
MMBT7002
MMBT7002
N
N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor - Anreicherungstyp
Version 2011-02-01
2.9 ±0.1 0.4 3
Type Code
1
2
1.1
1.9
Dimensions - Ma.
002 60 V 60 V
± 20 V ± 40 V 200 mW 115 mA 800 mA 150°C -55…+150°C
© Diotec Semiconductor AG
1
MMBT7002
Characteristics (Tj = 25°C)
Drain-Source breakdown voltage * Drain-Source-Durchbruchspannung ID = 10 µA Drain-Source leakage current * Drain-Source-Leckstrom BVDSS G . |
MMBT7002 Datasheet and Specifications PDF
The MMBT7002 is a N-Channel MOSFET.
| Part Number | MMBT7002 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | SEMTECH |
| Overview |
MMBT7002
N-Channel Enhancement Mode Field Effect Transistor
Features • High density cell design for low RDS(ON) • Voltage controlled small signal switching
• High saturation current capability • High.
* High density cell design for low RDS(ON) * Voltage controlled small signal switching * High saturation current capability * High speed switching Gate Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage -Continuous -Non Repet. |