Datasheet4U Logo Datasheet4U.com

RB751S-40 Datasheet SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

Manufacturer: SEMTECH

Overview: RB751S-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for high speed switching and detection.

Datasheet Details

Part number RB751S-40
Manufacturer SEMTECH
File Size 214.56 KB
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Datasheet RB751S-40-SEMTECH.pdf

General Description

Cathode Anode 2 D Top View Marking Code: "D" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz, 1 Cycle) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between Terminals at VR = 1 V, f = 1 MHz Note: ESD sensitive product handling required.

Symbol VRM VR IO IFSM Tj Ts Value 40 30 30 200 125 - 40 to + 125 Unit V V mA mA OC OC Symbol VF IR CT Typ.

2 Max.

Key Features

  • Small surface mounting type.
  • Low reverse current and low forward voltage.
  • High reliability.

RB751S-40 Distributor & Price

Compare RB751S-40 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.