Part RB751V-40
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Category Diode
Manufacturer SEMTECH
Size 121.51 KB
SEMTECH

RB751V-40 Overview

Description

Cathode Anode 12 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol Peak Reverse Voltage Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.) Junction Temperature Storage Temperature Range Symbol VRM VR IO IFSM Tj Ts Value 40 30 30 200 125 - 40 to + 125 Unit V V mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between Terminals at VR = 1 V, f = 1 MHz Note: ESD sensitive product handling required. 0.37 0.5 - Unit V µA pF SEMTECH ELECTRONICS LTD.

Key Features

  • Small surface mounting type
  • Low reverse current and low forward voltage
  • High reliability