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MMBD217SEW - SILICON EPITAXIAL PLANAR SWITCHING DIODE

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Datasheet Details

Part number MMBD217SEW
Manufacturer SEMTECH
File Size 332.35 KB
Description SILICON EPITAXIAL PLANAR SWITCHING DIODE
Datasheet download datasheet MMBD217SEW Datasheet

Full PDF Text Transcription for MMBD217SEW (Reference)

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MMBD217SEW SILICON EPITAXIAL PLANAR SWITCHING DIODE 3 Applications • Ultra high speed switching 1 2 Marking Code: A7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Repet...

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Marking Code: A7 Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak www.DataSheet4U.com Reverse Voltage Symbol VRM VR IO IFM IFSM Pd TJ Ts Value 80 80 100 300 4 200 150 - 55 to + 150 Unit V V mA mA A mW O Reverse Voltage Average Rectified Forward Current (Single) Maximum (Peak) Forward Current (Single) Peak Forward Surge Current (tp = 1 µs) Power Dissipation Junction Temperature Storage Temperature Range C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 70 V Capacitance between Terminals at VR = 6, f = 1 MHz Reverse Recovery Time at IF = 5 mA, VR = 6 V, RL = 5