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SG Micro

SGM6607 Datasheet Preview

SGM6607 Datasheet

High Voltage Boost Converter

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SGM6607
1.1A High Voltage Boost
Converter in Small Packages
GENERAL DESCRIPTION
The SGM6607 is a monolithic high voltage switching
regulator with integrated 1.1A, 40V power MOSFET.
The device can be configured in several standard
switching-regulator topologies, including boost and
SEPIC. The device has a wide input voltage range to
support applications with input voltage from multi-cell
batteries or regulated 5V, 12V power rails.
The SGM6607 operates at a 1.2MHz switching
frequency, allowing the use of low-profile inductors and
low-value ceramic input and output capacitors. External
loop compensation components give the user flexibility
to optimize loop compensation and transient response.
The device has built-in protection features, such as
cycle-by-cycle over-current limit, output OVP, soft-start
and thermal shutdown.
The SGM6607 is available in Green TDFN-2×2-6L and
TSOT-23-6 packages and is rated over the -40to
+85temperature range.
FEATURES
3V to 20V Input Voltage Range
High Output Voltage: Up to 38V
41V Over-Voltage Protection
1.1A Integrated Switch
1.2MHz Fixed Switching Frequency
12V at 300mA and 24V at 150mA from 5V Input
(TYP)
Up to 93% Efficiency
Skip-Switching for Light Load
Built-In Soft-Start Function
500kΩ Pull-Down Resistor on EN Pin
-40to +85Operating Temperature Range
Available in Green TDFN-2×2-6L and TSOT-23-6
Packages
APPLICATIONS
Cell Phones
Portable Equipment
TYPICAL APPLICATION
VIN 5V
CIN
4.7μF
L
10μH
VIN
SW
ON/OFF
EN SGM6607
COMP
FB
CCOMP
RCOMP
10nF
4.99kΩ
GND
D1
COUT
4.7μF
R1
88.7kΩ
R2
10kΩ
Figure 1. Typical Application Circuit
VOUT
12V/300mA
SG Micro Corp
www.sg-micro.com
FEBRUARY 2018 – REV. A. 1




SG Micro

SGM6607 Datasheet Preview

SGM6607 Datasheet

High Voltage Boost Converter

No Preview Available !

SGM6607
1.1A High Voltage Boost
Converter in Small Packages
PACKAGE/ORDERING INFORMATION
MODEL
SGM6607
PACKAGE
DESCRIPTION
TDFN-2×2-6L
TSOT-23-6
SPECIFIED
TEMPERATURE
RANGE
-40to +85
ORDERING
NUMBER
SGM6607YTDI6G/TR
-40to +85SGM6607YTN6G/TR
PACKAGE
MARKING
6607
XXXX
SKDXX
PACKING
OPTION
Tape and Reel, 3000
Tape and Reel, 3000
NOTE: XX = Date Code. XXXX = Date Code.
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
MARKING INFORMATION
SKD X X
Date code - Month ("A" = Jan. "B" = Feb. "L" = Dec.)
Date code - Year ("A" = 2010, "B" = 2011 )
Chip I.D.
For example: SKDCD (2012, April)
ABSOLUTE MAXIMUM RATINGS
Supply Voltage on VIN....................................... -0.3V to 22V
Voltage on EN...................................................... -0.3V to 5V
Voltages on FB and COMP.................................. -0.3V to 3V
Voltage on SW ................................................... -0.3V to 40V
Junction Temperature.................................................+150
Package Thermal Resistance
TDFN-2×2-6L, θJA .................................................... 120/W
TSOT-23-6, θJA ........................................................ 190/W
Storage Temperature Range ....................... -65to +150
Lead Temperature (Soldering, 10s) ............................+260
ESD Susceptibility
HBM............................................................................. 4000V
MM................................................................................. 300V
RECOMMENDED OPERATING CONDITIONS
Operating Temperature Range ...................... -40to +85
OVERSTRESS CAUTION
Stresses beyond those listed may cause permanent damage
to the device. Functional operation of the device at these or
any other conditions beyond those indicated in the operational
section of the specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
ESD SENSITIVITY CAUTION
This integrated circuit can be damaged by ESD if you don’t
pay attention to ESD protection. SGMICRO recommends that
all integrated circuits be handled with appropriate precautions.
Failure to observe proper handling and installation procedures
can cause damage. ESD damage can range from subtle
performance degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage
because very small parametric changes could cause the
device not to meet its published specifications.
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, specification or other related things if necessary
without notice at any time.
SG Micro Corp
www.sg-micro.com
FEBRUARY 2018
2



Part Number SGM6607
Description High Voltage Boost Converter
Maker SG Micro
Total Page 3 Pages
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SGM6607 Datasheet PDF





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