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SHINDENGEN

S1NBC80 Datasheet Preview

S1NBC80 Datasheet

Bridge Diode

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SMD/DIP
S1NBC
800V 1.5A
I
I
Bridge Diode
OUTLINE
Package 1NA SMD
NC 80
0264
Package 1NA DIP
NC 80
0264
For details of outline dimensions, refer to our web site or the Semiconductor
Terminal Connection.”
RRAATTININGGSS
Absolute Maximum Ratings
Item
Storage Temperature
Operation Junction Temperature
Maximum Reverse Voltage
Symbol Conditions
Average Rectified Forward Current
50Hz sine wave, Resistance load
l
Type No. S1NBC60
S1NBC80
Unit
l
Peak Surge Forward Current
Current Squared Time
50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25
per diode
Forward Voltage
Reverse Current
Thermal Resistance
Electrical Characteristics
l
Pulse measurement, per diode
Pulse measurement, per diode
l Junction to Lead
Junction to Ambient
On glass-epoxy substrate, copper soldering pad area 324mm2
On glass-epoxy substrate, copper soldering pad area 101mm2
J534-p 2014.07




SHINDENGEN

S1NBC80 Datasheet Preview

S1NBC80 Datasheet

Bridge Diode

No Preview Available !

CHARACTERISTIC DIAGRAMS
S1NBC
50Hz sine wave is used for measurements.
J534-p 2014.07


Part Number S1NBC80
Description Bridge Diode
Maker SHINDENGEN
Total Page 4 Pages
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