S10H050S Key Features
- 100V,130A,Rds(on)(typ)=5m @Vgs=10V -High Ruggedness -Fast Switching -100% Avalanche Tested -Improved dv/dt Capabil
- Split-Gate MOS Technology
- Part: S10H050S
- Manufacturer: SI-TECH
- Size: 971.96 KB
Related SI-TECH Datasheets
| Part Number | Description |
|---|---|
| S10H050R | N-Channel MOSFET |
| S10H038R | N-Channel MOSFET |
| S10H038S | N-Channel MOSFET |
| S10H06R | N-Channel MOSFET |
| S10H06RN | N-Channel MOSFET |
S10H050S Description
This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products. Ratings Symbol Parameter VDSS...