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S10H050R - N-Channel MOSFET

This page provides the datasheet information for the S10H050R, a member of the S10H050R-SI N-Channel MOSFET family.

Datasheet Summary

Description

This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology.

Features

  • 100V,130A,Rds(on)(typ)=5m @Vgs=10V.
  • High Ruggedness.
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • Split-Gate MOS Technology General.

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Datasheet preview – S10H050R

Datasheet Details

Part number S10H050R
Manufacturer SI-TECH
File Size 971.96 KB
Description N-Channel MOSFET
Datasheet download datasheet S10H050R Datasheet
Additional preview pages of the S10H050R datasheet.

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Full PDF Text Transcription

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SI-TECH SEMICONDUCTOR CO.,LTD S10H050R/S N-Channel MOSFET Features █100V,130A,Rds(on)(typ)=5m @Vgs=10V █High Ruggedness █Fast Switching █100% Avalanche Tested █Improved dv/dt Capability █ Split-Gate MOS Technology General Description This Power MOSFET is produced using Si-Tech’s advanced Split-Gate MOS Technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.These devices are well suited for low voltage application such as automotive,DC/DC converters,and high efficiency switch for power management in portable and battery products.
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