SVF4N150F Datasheet | SILAN MICROELECTRONICS

DESCRIPTION SVF4N150PF(P7)(F) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-Cell TM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in power supplies. FEATURES - 4A, 1500V, RDS(on)(typ)=5.0@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability 1 3 12 3 TO-220F-3L 1. Gate 2. Drain 3. Source 123 TO-3PF 12 3 TO-247-3L ORDERING INFORMATION Part No. SVF4N150PF SVF4N150P7 SVF4N150F Package TO-3PF TO-247-3L TO-220F-3L Marking 4N150 4N150P7 SVF4N150F Hazardous Substance Control Pb free Pb free Pb free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.3 Page 1 of 9 Silan Microelectronics SVF4N150PF(P7)(F)_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current TC=25C TC=100C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature...