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SVF4N60CAMN - 600V N-CHANNEL MOSFET

Download the SVF4N60CAMN datasheet PDF. This datasheet also covers the SVF4N60CAF variant, as both devices belong to the same 600v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 13 1 TO-252-2L 1.Gate 3 2.Drain 3.Source 123 TO-251N-3L 1 23 TO-262-3L 1 2 3 TO-220F-3L.
  • 4A, 600V, RDS(on)(typ. )=2.0@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF4N60CAF-SILANMICROELECTRONICS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF4N60CAMN
Manufacturer SILAN MICROELECTRONICS
File Size 407.04 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF4N60CAMN Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVF4N65CAD 650V N-CHANNEL MOSFET SL
SVF4N65CAF 650V N-CHANNEL MOSFET SL
SVF4N65CAK 650V N-CHANNEL MOSFET SL
SVF4N65CAM 650V N-CHANNEL MOSFET SL
SVF4N65CAMJ 650V N-CHANNEL MOSFET SL

Other Datasheets by SILAN MICROELECTRONICS

Part Number Description
SVF4N60CAMJ 600V N-CHANNEL MOSFET
SVF4N60CADTR 600V N-CHANNEL MOSFET
SVF4N60CAF 600V N-CHANNEL MOSFET
SVF4N60CAK 600V N-CHANNEL MOSFET
SVF4N60CAT 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 13 1 TO-252-2L 1.Gate 3 2.Drain 3.Source 123 TO-251N-3L 1 23 TO-262-3L 1 2 3 TO-220F-3L  4A, 600V, RDS(on)(typ.)=2.
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