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SVF4N60CAT - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF4N60CAT, a member of the SVF4N60CAF 600V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 13 1 TO-252-2L 1.Gate 3 2.Drain 3.Source 123 TO-251N-3L 1 23 TO-262-3L 1 2 3 TO-220F-3L.
  • 4A, 600V, RDS(on)(typ. )=2.0@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 12 3 TO-220-3L 12 3 TO-251J-3L.

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Datasheet preview – SVF4N60CAT

Datasheet Details

Part number SVF4N60CAT
Manufacturer SILAN MICROELECTRONICS
File Size 407.04 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF4N60CAT Datasheet
Additional preview pages of the SVF4N60CAT datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVF4N60CAF/K/D/T/MN/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES 13 1 TO-252-2L 1.Gate 3 2.Drain 3.Source 123 TO-251N-3L 1 23 TO-262-3L 1 2 3 TO-220F-3L  4A, 600V, RDS(on)(typ.)=2.
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