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SVF4N65CAM - 650V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF4N65CAM, a member of the SVF4N65CAF 650V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 4A, 650V, RDS(on)(typ. )=2.3Ω@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet preview – SVF4N65CAM

Datasheet Details

Part number SVF4N65CAM
Manufacturer SL
File Size 506.72 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF4N65CAM Datasheet
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Full PDF Text Transcription

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SVF4N65CAF/D/M/MJ/MN/K _Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65CAF/D/M/MJ/MN/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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