Silan
Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted；reference only)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
SVF4N
60T
Ratings
SVF4N SVF4N SVF4N
60F(G) 60D/M 60MJ
SVF4N
60K
Unit
VDS 600 V
VGS ±30 V
4.0
ID A
2.5
IDM 16 A
100 33 77 86 95 W
PD
0.8 0.26 0.62 0.69 0.76 W/°C
EAS 217 mJ
TJ
-55～+150
°C
Tstg
-55～+150
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol SVF4N
60T
RθJC
RθJA
1.25
62.5
Ratings
SVF4N SVF4N
60F(G) 60D/M
3.85 1.61
120 110
SVF4N
60MJ
1.45
110
SVF4N
60K
1.32
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted, reference only)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
Min.
600
--
--
2.0
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
RDS(on) VGS=10V, ID=2A
-- 2.0 2.4
Ciss
Coss
Crss
VDS=25V,VGS=0V,
f=1.0MHZ
-- 449.7 --
-- 57 --
-- 2.0 --
td(on)
VDD=300V,ID=4A,
-- 16.8 --
tr RG=25Ω
-- 26.2 --
td(off)
-- 37.4 --
tf (Note2,3) -- 20.2 --
Qg VDS=480V,ID=4A,
-- 8.16 --
Qgs VGS=10V
-- 2.63 --
Qgd (Note 2,3) -- 3.01 --
Unit
V
µA
nA
V
Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.6
2012.07.24
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