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SILAN MICROELECTRONICS

SVF4N60FG Datasheet Preview

SVF4N60FG Datasheet

600V N-CHANNEL MOSFET

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SVF4N60D/F/FG/T/K/M/MJ_Datasheet
4A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement
mode power MOS field effect transistor which is produced
using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guard ring
terminal have been especially tailored to minimize on-state
resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power suppliers, DC-
DC converters and H-bridge PWM motor drivers.
FEATURES
4A, 600V, RDS(on)(typ)=2.0@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF4N60T
SVF4N60F
SVF4N60FG
SVF4N60K
SVF4N60D
SVF4N60DTR
SVF4N60MJ
SVF4N60M
Package
TO-220-3L
TO-220F-3L
TO-220F-3L
TO-262-3L
TO-252-2L
TO-252-2L
TO-251J-3L
TO-251D-3L
Marking
SVF4N60T
SVF4N60F
SVF4N60FG
SVF4N60K
SVF4N60D
SVF4N60D
SVF4N60MJ
SVF4N60M
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
Material
Pb free
Pb free
Halogen free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
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Tape & Reel
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REV:1.6
2012.07.24
Page 1 of 11




SILAN MICROELECTRONICS

SVF4N60FG Datasheet Preview

SVF4N60FG Datasheet

600V N-CHANNEL MOSFET

No Preview Available !

Silan
Microelectronics SVF4N60D/F/FG/T/K/M/MJ_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise notedreference only)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
SVF4N
60T
Ratings
SVF4N SVF4N SVF4N
60F(G) 60D/M 60MJ
SVF4N
60K
Unit
VDS 600 V
VGS ±30 V
4.0
ID A
2.5
IDM 16 A
100 33 77 86 95 W
PD
0.8 0.26 0.62 0.69 0.76 W/°C
EAS 217 mJ
TJ
-55+150
°C
Tstg
-55+150
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol SVF4N
60T
RθJC
RθJA
1.25
62.5
Ratings
SVF4N SVF4N
60F(G) 60D/M
3.85 1.61
120 110
SVF4N
60MJ
1.45
110
SVF4N
60K
1.32
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted, reference only)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
Min.
600
--
--
2.0
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
RDS(on) VGS=10V, ID=2A
-- 2.0 2.4
Ciss
Coss
Crss
VDS=25V,VGS=0V,
f=1.0MHZ
-- 449.7 --
-- 57 --
-- 2.0 --
td(on)
VDD=300V,ID=4A,
-- 16.8 --
tr RG=25
-- 26.2 --
td(off)
-- 37.4 --
tf (Note2,3) -- 20.2 --
Qg VDS=480V,ID=4A,
-- 8.16 --
Qgs VGS=10V
-- 2.63 --
Qgd (Note 2,3) -- 3.01 --
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.6
2012.07.24
Page 2 of 11


Part Number SVF4N60FG
Description 600V N-CHANNEL MOSFET
Maker SILAN MICROELECTRONICS
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