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SVF4N60M - 600V N-CHANNEL MOSFET

This page provides the datasheet information for the SVF4N60M, a member of the SVF4N60D 600V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

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Datasheet preview – SVF4N60M

Datasheet Details

Part number SVF4N60M
Manufacturer SILAN MICROELECTRONICS
File Size 493.31 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF4N60M Datasheet
Additional preview pages of the SVF4N60M datasheet.

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Full PDF Text Transcription

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SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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