SSF8NP60U mosfet equivalent, n-channel mosfet.
* High dv/dt and avalanche capabilities
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance
TO-220
SSF8NP60U
M.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Conti.
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power.
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