Datasheet Summary
Main Product Characteristics:
D1 D2
VDSS RDS(on) ID
20V 20mohm(typ.) 4A
SOT23-6 Marking and pin Assignment
G1
G2
S1
S2
Schematic diagram
Features and Benefits:
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- Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These Features bine to make this design an extremely efficient and reliable device for use in buttery...
