SSF8205 Overview
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit 20 ± 10 4 25 1.25 -55 To 150 Unit V V A A W ℃ ©Silikron Semiconductor CO.,LTD.
