Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
Features
- Advanced trench MOSFET process technology.
- Special designed for buttery protection, load
switching and general power management.
- Ultra low on-resistance with low gate charge.
- Fast switching and reverse body recovery.
- 150℃ operating temperature
SSF8205UH2
D1 G1
G2
D2
S1 S2
8205UH2
Marking and pin
Assignment
Schematic diagram
.
SSF8205UH2 Datasheet
