Datasheet Summary
20V Dual N-Channel MOSFET
Main Product Characteristics
D1
VDSS RDS(on) ID
20V 20mΩ (typ.) 4A
SOT-23-6L Marking and Pin Assignment
D2 G2
G1
S1
S2
Schematic Diagram
Features and Benefits
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- Advanced trench MOSFET process technology Ideal for battery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150°C operating temperature
Description
The SSF8205 utilizes the latest trench processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These Features make this device extremely efficient and reliable for use in battery protection,...
