• Part: SBA5089
  • Description: DC-5 GHz/ Cascadable InGaP/GaAs HBT MMIC Amplifier
  • Manufacturer: SIRENZA MICRODEVICES
  • Size: Direct Link
Download SBA5089 Datasheet PDF
SIRENZA MICRODEVICES
SBA5089
SBA5089 is DC-5 GHz/ Cascadable InGaP/GaAs HBT MMIC Amplifier manufactured by SIRENZA MICRODEVICES.
- Part of the SBA-5089 comparator family.
Product Description Sirenza Microdevices’ SBA-5089 is a high performance In Ga P/ Ga As Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with In Ga P process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain & Return Loss 30 20 10 0 -10 -20 -30 -40 0 1 2 3 Frequency (GHz) 4 5 6 S11 S22 S21 SBA-5089 DC-5 GHz, Cascadable In Ga P/Ga As HBT MMIC Amplifier Product Features - IP3 = 34.0d Bm @ 1950MHz - Pout=13.0 d Bm @-45d Bc ACP IS-95 1950MHz - Robust 1000V ESD, Class 1C - Operates From Single Supply - Patented Thermal Design Applications - PA Driver Amplifier - Cellular, PCS, GSM, UMTS - IF Amplifier - Wireless Data, Satellite Terminals U nits d B d B m d B m d B m MHz d B d B d B V m A °C /W 1950 MHz 1950 MHz 1950 MHz 4.5 72 14.0 9.0 Frequency 850 MHz 1950 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz 1950 MHz Min. 18.5 16.5 18.0 32.0 Typ. 20.0 18.0 19.7 19.5 36.0 34.0 13.0 4400 20.0 11.0 4.5 4.9 80 70 5.5 5.3 88 Max. 21.5 19.5 Symbol G P 1d B OIP3 POUT Parameter Small Si gnal Gai n Output Power at 1d B C ompressi on Output Thi rd Order Intercept Poi nt Output Power @ -45d Bc AC P IS-95 9 Forward C hannels Bandwi dth D etermi ned by Return Loss (>10d B) IRL ORL NF VD ID RTH, j-l Input Return Loss Output Return Loss Noi se Fi gure D evi ce Operati ng Voltage D evi ce Operati ng C urrent Thermal Resi stance (juncti on to lead) Test Conditions: VS = 8 V RBIAS = 39 Ohms ID = 80 m A Typ. TL = 25ºC OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 d Bm ZS = ZL = 50 Ohms Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured...