SNM068R2DRAQ mosfet equivalent, single n-channel power mosfet.
* Drain-Source Withstand Voltage: 60V
* Max. RDS(on) : 8.2 mΩ @ VGS=10V
13.5 mΩ @ VGS=4.5V
* Automotive applications
* AEC-Q101 Qualified
* Excellent .
* AEC-Q101 Qualified
* Excellent ON resistance
* General footprint package PDFN3333-8L
* 100% Rg and Ava.
The SNM068R2DRAQ is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high performance automotive DC-DC conversion, pow.
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