SVF4N65CAMN
Description
is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.
Key Features
- 4A, 650V, RDS(on)(typ.)=2.3Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
