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SVF4N65MJG - N-channel MOSFET

Download the SVF4N65MJG datasheet PDF (SVF4N65T included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

Features

  • ∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF4N65T-SL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF4N65MJG
Manufacturer SL
File Size 642.54 KB
Description N-channel MOSFET
Datasheet download datasheet SVF4N65MJG Datasheet

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Full PDF Text Transcription

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SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 4A,650V, RDS(on)(typ)=2.5Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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