S29WS256P memory equivalent, burst simultaneous read/write mirrorbit flash memory.
* Single 1.8 V read/program/erase (1.70
–1.95 V)
* 90 nm MirrorBit™ Technology
* Simultaneous Read/Write operation with zero latency
* Rand.
requiring higher density, better performance and lowered power consumption.
Performance Characteristics
Read Access Tim.
of Spansion data sheet designations are presented here to highlight their presence and definitions.
Advance Information
The Advance Information designation indicates that Spansion Inc. is developing one or more specific products, but has not commit.
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