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S29WS256P - Simultaneous Read/Write Flash

Download the S29WS256P datasheet PDF. This datasheet also covers the S29WS512P variant, as both devices belong to the same simultaneous read/write flash family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Single 1.8 V read/program/erase (1.70.
  • 1.95 V).
  • 90 nm MirrorBit™ Technology.
  • Simultaneous Read/Write operation with zero latency.
  • Random page read access mode of 8 words with 20 ns intra page access time.
  • 32 Word / 64 Byte Write Buffer.
  • Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively.
  • Four 16 Kword sectors at both top and bottom of memory array.
  • 510/254/126 64Kword sectors (WS512/256/128P).
  • Programmable li.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S29WS512P-CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
S29WS256P Burst Simultaneous Read/Write MirrorBit Flash Memory SPANSION
S29WS256N SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY SPANSION
S29WS256N Burst Mode Flash Memory SPANSION
S29WS-N SIMULTANEOUS READ/WRITE BURST MODE FLASH MEMORY SPANSION
S29WS-P Burst Simultaneous Read/Write MirrorBit Flash Memory SPANSION

Other Datasheets by Cypress (now Infineon)

Part Number Description
S29WS128P Simultaneous Read/Write Flash
S29WS512P Simultaneous Read/Write Flash
S29AL008D Boot Sector Flash
S29AL008J Boot Sector Flash Memory
S29AL016D Boot Sector Flash

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S29WS512P S29WS256P S29WS128P 512/256/128 Mb (32/16/8 M x 16 bit), 1.8 V, Simultaneous Read/Write Flash Features  Single 1.8 V read/program/erase (1.70–1.