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S80016LK7 - SYNCHRONOUS DRAM

General Description

The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits.

Each is internally configured as a quad-bank DRAM.

Key Features

  • es: Intel PC-100 (3-3-3) or PC133 (3-3-3) compatible Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access precharge time Programmable burst lengths: 1, 2, or 4 using Interleaved Burst Addressing Auto Precharge and Auto Refresh modes 64ms, 4,096-cycle refresh quad-row refresh, (15.6µs/row) Self Refresh mode 1 LVTTL-compatible inputs and outputs Single +3.3V ±0.3.

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Datasheet Details

Part number S80016LK7
Manufacturer SPECtek
File Size 509.10 KB
Description SYNCHRONOUS DRAM
Datasheet download datasheet S80016LK7 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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128Mb: x4, x8, x16 SDRAM 3.3V SYNCHRONOUS DRAM • • • • • • • • • • • Features: Intel PC-100 (3-3-3) or PC133 (3-3-3) compatible Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access precharge time Programmable burst lengths: 1, 2, or 4 using Interleaved Burst Addressing Auto Precharge and Auto Refresh modes 64ms, 4,096-cycle refresh quad-row refresh, (15.6µs/row) Self Refresh mode 1 LVTTL-compatible inputs and outputs Single +3.3V ±0.3V power supply The x16 devices are optimized for both single and dual rank DIMM applications. The x8 devices are optimized for single rank DIMM applications.