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SFF110S.22 - N-Channel Power MOSFET

Download the SFF110S.22 datasheet PDF. This datasheet also covers the SFF110S22 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Rugged Construction with Polysilcon Gate.
  • Small Footprint Hermetic Surface Mount Device with Excellent Thermal Properties.
  • Replacement/Enhancement for 2N6782.
  • TX, TXV, S-Level Screening Available.
  • Very Fast Switching Characteristics.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SFF110S22_SSDI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SFF110S.22
Manufacturer SSDI
File Size 63.85 KB
Description N-Channel Power MOSFET
Datasheet download datasheet SFF110S.22 Datasheet

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Other Datasheets by SSDI

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF110S.22 3.5 A /100 Volts / 0.6 Ω N-Channel MOSFET Transistor Features: • Rugged Construction with Polysilcon Gate • Small Footprint Hermetic Surface Mount Device with Excellent Thermal Properties • Replacement/Enhancement for 2N6782 • TX, TXV, S-Level Screening Available • Very Fast Switching Characteristics DESIGNER’S DATA SHEET SMD.22 Maximum Ratings Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage Continuous Drain Current Power Dissipation @ TC = 25ºC Power Dissipation @ TA = 25ºC Operating & Storage Temperature Maximum Thermal Resistance Junction to Case and to Ambient Note1: Derated 60.