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SFL044J Datasheet Preview

SFL044J Datasheet

N-Channel Logic Level POWER MOSFET

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SFL044J pdf
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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFL044 _J_ __ __
│ │ └ Screening 2/ __ = Not Screen
││
││
││
││
TX = TX Level
TXV = TXV Level
S = S Level
│ └ Lead Option 3/ __ = Straight
UB = Up Bend
DB= Down Bend
Package: TO-257
TO-257 Pin Out: Pin1: Drain
Pin2: Source
Pin3: Gate
SFL044J
30 AMP / 60 Volts / 0.030
N-Channel, Logic Level
POWER MOSFET
Features:
Logic Level Gate Drive
Rugged Construction with Polysilicon Gate
Low RDS(ON) and High Transconductance
Excellent High Temperature Stability
Very Fast Switching Speed
Fast Recovery and Superior dV/dt Performance
Increased Reverse Energy Capability
Low Input and Transfer Capacitance for Easy Paralleling
Hermetically Sealed Surface Mount Power Package
Ceramic Seals Available for Improved Hermeticity
TX, TXV, Space Level Screening Available
Replacement for IRLIZ44G Types
Maximum Ratings
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current @ VGS = 5V
Operating & Storage Temperature
Thermal Resistance, Junction to Case
Power Dissipation
TC = 25ºC
TC = 55ºC
Symbol
VDS
VGS
ID
Top & Tstg
RθJC
PD
Value
60
±10
30
-55 to +175
2
63
48
Units
Volts
Volts
Amps
ºC
ºC/W
W
Ø..115400
.660
.645 .430
.410
1.100
.500
2x
.180
.150
.200
MIN
.420
.410
PIN 3
.105
PIN 2 .095
PIN 1
SUFFIX: JD
.200
MIN
SUFFIX: JU
.180
.150
.537
.527
.210
.190
3x Ø..003255
.125
.110
SUFFIX JDB
SUFFIX JUB
.045
.035
SUFFIX: J
Notes: 1/ For ordering information, Price, and Availability, Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Per Leg.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00265D
DOC



SSDI
SSDI

SFL044J Datasheet Preview

SFL044J Datasheet

N-Channel Logic Level POWER MOSFET

No Preview Available !

SFL044J pdf
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics @ TJ = 25ºC
(Unless Otherwise Specified)
Drain to Source Breakdown Voltage
(VGS=0 V, ID=250 μA)
Drain to Source On State Resistance
(VGS=5 V, ID=18A)
Drain to Source On Resistance
(VGS=4 V, ID= 15A)
Gate Threshold Voltage
(VDS=VGS, ID= 250μA)
Forward Transconductance
(VDS>10V, IDS=18A)
Zero Gate Voltage Drain Current
(VDS=max rated voltage, VGS=0 V)
(VDS=80% rated VDS, VGS=0 V, TA=150ºC)
Symbol
BVDSS
RDS(on)1
RDS(on)2
VGS(th)
gfs
IDSS
Gate to Source Leakage Forward
Gate to Source Leakage Reverse
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn on Delay Time
Fall Time
Diode Forward Voltage
(IS= Rated ID, VGS=0 V, TJ=25ºC)
Diode Reverse Recovery Time
Input Capacitance
Input Capacitance
Reverse Transfer Capacitance
At rated VGS
VGS= 5 Volts
80% rated VDS
ID= 51 A
VDD=50% Rated VDS
ID= 51 A
RG= 4.6Ω
RD= 0.56Ω
TJ=25ºC, IF=51A
di/dt=100A/μsec
VGS=0 Volts
VDS=25 Volts
f=1 MHz
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VSD
trr
Ciss
Coss
Crss
SFL044J
Min
60
––
1.0
22
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
––
Typ
––
0.026
0.034
1.5
35
––
––
––
––
50
10
38
17
230
42
110
––
100
3300
1200
200
Max Units
–– Volts
0.030
Ω
0.040
Ω
2.0 V
–– S(mho)
25
250
μA
+100
-100
66
12
43
––
––
––
––
2.5
180
nA
nC
nsec
V
nsec
––
–– pF
––
For thermal derating curves and other characteristics please contact SSDI Marketing Department.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: F00265D
DOC


Part Number SFL044J
Description N-Channel Logic Level POWER MOSFET
Maker SSDI
Total Page 2 Pages
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