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SFT2012 - High Energy NPN Transistor

This page provides the datasheet information for the SFT2012, a member of the SFT2010 High Energy NPN Transistor family.

Features

  • BVCBO = 250 V MIN.
  • 600 Watts Power Dissipation.
  • Excellent SOA Curve.
  • Es/b of 800mJ.
  • Gain of over 5 at 200A.
  • High Reliability Construction.
  • Planar Chip Construction with Low Leakage and Very Fast Switching.
  • TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings Collector.
  • Emitter Voltage Collector.
  • Base Voltage Emitter.
  • Base Voltage Collector.

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Datasheet preview – SFT2012

Datasheet Details

Part number SFT2012
Manufacturer SSDI
File Size 68.93 KB
Description High Energy NPN Transistor
Datasheet download datasheet SFT2012 Datasheet
Additional preview pages of the SFT2012 datasheet.

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Full PDF Text Transcription

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Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT __ __ __ __ │ │ │ └ Screening 2/ __ = No Screening │ ││ TX = TX Level │ ││ TXV = TXV Level │ ││ S = S Level │ │ └ Lead Bend 3/ 4/ __ = Straight Leads ││ │ └ Package 3/ /3 = TO-3 0.
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