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SFT2010 - High Energy NPN Transistor

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SSDI

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SFT2010 High Energy NPN Transistor by SSDI - Datasheet Preview — Datasheet preview – SFT2010

Datasheet Details

Part number	SFT2010
Manufacturer	SSDI
File Size	68.93 KB
Description	High Energy NPN Transistor
Datasheet	SFT2010 Datasheet
Additional preview pages of the SFT2010 datasheet.

Product details

Features

BVCBO = 250 V MIN.
600 Watts Power Dissipation.
Excellent SOA Curve.
Es/b of 800mJ.
Gain of over 5 at 200A.
High Reliability Construction.
Planar Chip Construction with Low Leakage and Very Fast Switching.
TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings Collector.
Emitter Voltage Collector.
Base Voltage Emitter.
Base Voltage Collector.

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Published: Aug 2, 2017 |