SFT2010 - High Energy NPN Transistor

SSDI

Key Features

BVCBO = 250 V MIN.
600 Watts Power Dissipation.
Excellent SOA Curve.
Es/b of 800mJ.
Gain of over 5 at 200A.
High Reliability Construction.
Planar Chip Construction with Low Leakage and Very Fast Switching.
TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings Collector.
Emitter Voltage Collector.
Base Voltage Emitter.
Base Voltage Collector.

SFT2010 high energy npn transistor by SSDI - Datasheet Preview

Datasheet Details

Part number	SFT2010
Manufacturer	SSDI
File Size	68.93 KB
Description	High Energy NPN Transistor
Datasheet	SFT2010 Datasheet

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SFT2012	High Energy NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT __ __ __ __ │ │ │ └ Screening 2/ __ = No Screening │ ││ TX = TX Level │ ││ TXV = TXV Level │ ││ S = S Level │ │ └ Lead Bend 3/ 4/ __ = Straight Leads ││ │ └ Package 3/ /3 = TO-3 0.