Part SFT2010
Description High Energy NPN Transistor
Category Transistor
Manufacturer SSDI
Size 68.93 KB
SSDI
SFT2010

Overview

  • BVCBO = 250 V MIN
  • 600 Watts Power Dissipation
  • Excellent SOA Curve
  • Es/b of 800mJ
  • Gain of over 5 at 200A
  • High Reliability Construction
  • Planar Chip Construction with Low Leakage and Very Fast Switching
  • TX, TXV, S-Level Screening Available2/ - Consult Factory