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SFT2012 - High Energy NPN Transistor

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SSDI

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SFT2012 High Energy NPN Transistor by SSDI - Datasheet Preview — Datasheet preview – SFT2012

Datasheet Details

Part number	SFT2012
Manufacturer	SSDI
File Size	68.93 KB
Description	High Energy NPN Transistor
Datasheet	SFT2012 Datasheet
Note	This datasheet PDF includes multiple part numbers: SFT2012, SFT2010. Please refer to the document for exact specifications by model.
Additional preview pages of the SFT2012 datasheet.

Product details

Features

BVCBO = 250 V MIN.
600 Watts Power Dissipation.
Excellent SOA Curve.
Es/b of 800mJ.
Gain of over 5 at 200A.
High Reliability Construction.
Planar Chip Construction with Low Leakage and Very Fast Switching.
TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings Collector.
Emitter Voltage Collector.
Base Voltage Emitter.
Base Voltage Collector.

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Published: Aug 2, 2017 |