SFT2012 - High Energy NPN Transistor

SSDI

Download the SFT2012 datasheet PDF. This datasheet also covers the SFT2010 variant, as both devices belong to the same high energy npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

BVCBO = 250 V MIN.
600 Watts Power Dissipation.
Excellent SOA Curve.
Es/b of 800mJ.
Gain of over 5 at 200A.
High Reliability Construction.
Planar Chip Construction with Low Leakage and Very Fast Switching.
TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings Collector.
Emitter Voltage Collector.
Base Voltage Emitter.
Base Voltage Collector.

📥 Download Datasheet

SFT2012 high energy npn transistor by SSDI - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SFT2010-SSDI.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SFT2012
Manufacturer	SSDI
File Size	68.93 KB
Description	High Energy NPN Transistor
Datasheet	SFT2012 Datasheet

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Other Datasheets by SSDI

Part Number	Description
SFT2010	High Energy NPN Transistor
SFT2014	High Energy NPN Transistor
SFT2222A2	Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor
SFT22907GW	Dual Microminiature Package 600 mA 60 Volts Complimentary NPN & PNP Transistor
SFT2369A2	Dual Microminiature Package 100 mA 15 Volts Dual NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT __ __ __ __ │ │ │ └ Screening 2/ __ = No Screening │ ││ TX = TX Level │ ││ TXV = TXV Level │ ││ S = S Level │ │ └ Lead Bend 3/ 4/ __ = Straight Leads ││ │ └ Package 3/ /3 = TO-3 0.