SFT2012 - High Energy NPN Transistor

This page provides the datasheet information for the SFT2012, a member of the SFT2010 High Energy NPN Transistor family.

Product Overview

SSDI

Part number	SFT2012
Manufacturer	SSDI
File Size	68.93 KB
Description	High Energy NPN Transistor
Datasheet	SFT2012 Datasheet
Additional preview pages of the SFT2012 datasheet.

BVCBO = 250 V MIN.
600 Watts Power Dissipation.
Excellent SOA Curve.
Es/b of 800mJ.
Gain of over 5 at 200A.
High Reliability Construction.
Planar Chip Construction with Low Leakage and Very Fast Switching.
TX, TXV, S-Level Screening Available2/ - Consult Factory Maximum Ratings Collector.
Emitter Voltage Collector.
Base Voltage Emitter.
Base Voltage Collector.

Other Datasheets by SSDI

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Published: Aug 2, 2017 |