9435GM
9435GM is SSM9435GM manufactured by SSM.
DESCRIPTION
The SSM9435GM acheives fast switching performance with low gate charge without a plex drive circuit. It is suitable for low voltage applications such as battery management and general high-side switch circuits. The SSM9435GM is supplied in an Ro HS-pliant SO-8 package, which is widely used for medium power mercial and industrial surface mount applications.
-30V 50mΩ -5.3A
Pb-free; Ro HS-pliant SO-8
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D D D D G
SO-8
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VGS ID IDM PD Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 70°C Pulsed drain current
Value -30 ±20 -5.3 -4.7 -20 2.5 0.02
Units V V A A A W W/°C
Total power dissipation, TC = 25°C Linear derating factor
TSTG TJ
Storage temperature range Operating junction temperature range
-55 to 150 -55 to 150
°C °C
THERMAL CHARACTERISTICS
Symbol RΘ JA Parameter
Maximum thermal resistance, junction-ambient
Value
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
2/12/2006 Rev.3.01
.Silicon Standard.
1 of 5
SSM9435GM
ELECTRICAL CHARACTERISTICS
Symbol BVDSS Parameter Drain-source breakdown voltage
Breakdown voltage temperature coefficient
(at Tj = 25°C, unless otherwise specified)
Test Conditions VGS=0V, ID=-250u A Reference to 25°C, ID=-1m A VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A Min. -30 -1 Typ. -0.04 10 9 3 5 11 8 25 17 507 222 158 Max. Units 50 90 -3 -1 -25 ±100 15 810 V V/°C mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F
∆ BV DSS/∆...
